Samsung officially started the process of the production of the fifth generation of the chip memory V-NAND

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Was Samsung a leader in the field of manufacturing memory chips for years, has announced the South Korean company today that it has started the process of producing the next generation of memory chips V-NAND. This is the fifth generation of this technology and the main advantage here is the dependency of interface Toggle DDR 4.0 NAND.

The fifth generation of V-NAND technology allows the transfer speed is faster by 40 percent between memory storage and memory random compared with the fourth generation of the same technology to speed the transport now to 1.4 gigabit per second. But besides the better performance, the memory chip new provide better efficiency in energy consumption by reducing the capacity class of 1.8 volts to 1.2 volts.

Are manufactured the fifth generation of the chip memory V-NAND in a manner similar to previous generations, but instead of merging the 64 layer, they come with a 90 layer be stacked in a structure similar to a pyramid with the microscopic holes in the middle. Work these holes as the channel is wide is estimated at only a few hundred of nano-Kilometers to contain more than 85 million cell CTF store each of these three parts of data.

This led to a marked improvement in Write speed by 30 percent compared to the previous generation. Response time to read the signal dropped also to 50μs. It is possible to make chips, new memory that has a capacity of a 256GB its way to a number of Samsung devices coming in the future, including smart phones, leading.

 

The post Samsung officially started the process of the production of the fifth generation of the chip memory V-NAND appeared first on electronic.

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