Samsung announces the internal memory of the new smart phones with a capacity of 1 TB as advertised +Galaxy S10

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Samsung announced today about the first memory of the eUFS 2.1 with a capacity of 1 TB in the world. Have entered these chips already mass production stage, so we can expect the use of memory chip this in the next generation of flagship smartphones of the company Samsung, is likely to be +Galaxy S10 is the first phone that uses a memory chip.

The memory chip of the new the Samsung company has a capacity of 1 TB, despite the fact that they have the same dimensions of the memory chip current amounting to a capacity of 512GB. Samsung has do this thanks to its ability to integrate 16 a layer of memory V-NAND on top of each other. It should be noted that Samsung managed to improve the aspect of travel also.

Featuring a memory chip new fast sequential read up to 1000 MB per second, the speed of writing sequential 260 MB per second. For comparison, the self SSD SATA core has a speed of reading up to 540 megabytes per second, that is impressive. In comparison with the memory chip current, which has a capacity of 512GB, it has increased the speed of reading random chip new memory that has a capacity of 1 TB by 38 percent. Generally, here below is a simple table that compares the memory chips internal of the different performance :

Memory Reading successive Writing successive Random read Write random
1TB eUFS 2.1 1000 MB/s 260 MB/s 58000 IOPS 50000 IOPS
512GB eUFS 2.1 860 MB/s 255 MB/s 42000 IOPS 40000 IOPS
256GB UFS Card 530 MB/s 170 MB/s 400000 IOPS 35000 IOPS
256 eUFS 2.0 850 MB/s 260 MB/s 45000 IOPS 40000 IOPS
128GB eUFS 2.0 300 MB/s 150 MB/s 19000 IOPS 14000 IOPS

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